S3KHE3/57T
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | S3KHE3/57T |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 800V 3A DO214AB |
Datenblätte: |
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RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.15 V @ 2.5 A |
Spannung - Sperr (Vr) (max) | 800 V |
Technologie | Standard |
Supplier Device-Gehäuse | DO-214AB (SMC) |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 2.5 µs |
Verpackung / Gehäuse | DO-214AB, SMC |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 800 V |
Strom - Richt (Io) | 3A |
Kapazität @ Vr, F | 60pF @ 4V, 1MHz |
Grundproduktnummer | S3K |
S3KHE3/57T Einzelheiten PDF [English] | S3KHE3/57T PDF - EN.pdf |
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AA
DIODE GEN PURP 800V 3A SMB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
Interface
S3KC JD
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AA
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A DO214AB
DIODE GEN PURP 800V 3A SMB
DIODE GEN PURP 800V 3A DO214AB
Interface
DIODE GEN PURP 800V 3A DO214AA
S3KF JD
DIODE GEN PURP 800V 3A DO214AB
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() S3KHE3/57TVishay General Semiconductor - Diodes Division |
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